CAR600M12HN6
RoHS

CAR600M12HN6

Part NoCAR600M12HN6
ManufacturerWolfspeed, Inc.
DescriptionSIC 2N-CH 1200V 908A MODULE
Datasheet Download Now!
ECAD Module CAR600M12HN6
Get Quotation Now!
Specification
PackageBulk
Series-
ProductStatusActive
TechnologySilicon Carbide (SiC)
Configuration2 N-Channel (Half Bridge)
FETFeature-
DraintoSourceVoltage(Vdss)1200V (1.2kV)
Current-ContinuousDrain(Id)@25°C908A (Tc)
RdsOn(Max)@Id-
Vgs-
Vgs(th)(Max)@Id-
GateCharge(Qg)(Max)@Vgs45300pF @ 0V
InputCapacitance(Ciss)(Max)@Vds-
Power-Max-40°C ~ 175°C (TJ)
OperatingTemperatureChassis Mount
MountingTypeModule
Package/CaseModule
SupplierDevicePackage-
Grade-
Qualification
In Stock: 4764
Pricing
QTY UNIT PRICE EXT PRICE
1 3069.171
10 3007.7876
100 2915.7124
1000 2823.6373
10000 2700.8705
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product
ISC058N04NM5ATMA1
ISC058N04NM5ATMA1
Infineon
40V 5.8M OPTIMOS MOSFET SUPERSO8
ZVP3310ASTOA
ZVP3310ASTOA
Diodes Inc.
MOSFET P-CH 100V 140MA E-LINE
IRF3805S
IRF3805S
Infineon
MOSFET N-CH 55V 75A D2PAK
DI006P02PW
DI006P02PW
Diotec Semiconductor
MOSFET POWERQFN 2X2 P -20V -6A 0
IRFC3205B
IRFC3205B
Infineon
MOSFET 55V 110A DIE
AON7414
AON7414
Alpha & Omega Semiconductor
MOSFET N-CH 30V 12.5A/20A 8DFN
FQB5P10TM
FQB5P10TM
onsemi
MOSFET P-CH 100V 4.5A D2PAK
SI4151DY-T1-GE3
SI4151DY-T1-GE3
Vishay Siliconix
P-CHANNEL 30-V (D-S) MOSFET SO-8