SI7726DN-T1-GE3
Part NoSI7726DN-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 30V 35A PPAK1212-8
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
SeriesSkyFET®, TrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C35A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)9.5mOhm @ 10A, 10V
RdsOn(Max)@Id2.6V @ 250µA
Vgs43 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1765 pF @ 15 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.8W (Ta), 52W (Tc)
PowerDissipation(Max)-50°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® 1212-8
SupplierDevicePackagePowerPAK® 1212-8
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
24078
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.3636 | |
| 10 | 0.3563 | |
| 100 | 0.3454 | |
| 1000 | 0.3345 | |
| 10000 | 0.32 |
Associated Product
