SI9424BDY-T1-GE3
RoHS

SI9424BDY-T1-GE3

Part NoSI9424BDY-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 20V 5.6A 8SO
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ECAD Module SI9424BDY-T1-GE3
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Specification
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusObsolete
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C5.6A (Ta)
DriveVoltage(MaxRdsOn2.5V, 4.5V
MinRdsOn)25mOhm @ 7.1A, 4.5V
RdsOn(Max)@Id850mV @ 250µA
Vgs40 nC @ 4.5 V
Vgs(th)(Max)@Id±9V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds1.25W (Ta)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperature8-SOIC
MountingType8-SOIC (0.154, 3.90mm Width)
SupplierDevicePackage-
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock: 13642
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Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product