SIA416DJ-T1-GE3
Part NoSIA416DJ-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 100V 11.3A PPAK
Datasheet
Download Now!
ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C11.3A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)83mOhm @ 3.2A, 10V
RdsOn(Max)@Id3V @ 250µA
Vgs10 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)295 pF @ 50 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.5W (Ta), 19W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SC-70-6
SupplierDevicePackagePowerPAK® SC-70-6
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
8025
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.5984 | |
| 10 | 0.5864 | |
| 100 | 0.5685 | |
| 1000 | 0.5505 | |
| 10000 | 0.5266 |
Associated Product
