SISS40DN-T1-GE3
Part NoSISS40DN-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 100V 36.5A PPAK
Datasheet
Download Now!
ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesThunderFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C36.5A (Tc)
DriveVoltage(MaxRdsOn6V, 10V
MinRdsOn)21mOhm @ 10A, 10V
RdsOn(Max)@Id3.5V @ 250µA
Vgs24 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)845 pF @ 50 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.7W (Ta), 52W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® 1212-8S
SupplierDevicePackagePowerPAK® 1212-8S
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
12348
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.555 | |
| 10 | 0.5439 | |
| 100 | 0.5272 | |
| 1000 | 0.5106 | |
| 10000 | 0.4884 |
Associated Product
