SIA477EDJ-T1-GE3
RoHS

SIA477EDJ-T1-GE3

Part NoSIA477EDJ-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 12V 12A PPAK SC70-6
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ECAD Module SIA477EDJ-T1-GE3
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)12 V
Current-ContinuousDrain(Id)@25°C12A (Tc)
DriveVoltage(MaxRdsOn-
MinRdsOn)14mOhm @ 7A, 4.5V
RdsOn(Max)@Id1V @ 250µA
Vgs87 nC @ 8 V
Vgs(th)(Max)@Id-
Vgs(Max)2970 pF @ 6 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature-
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SC-70-6
SupplierDevicePackagePowerPAK® SC-70-6
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 8206
Pricing
QTY UNIT PRICE EXT PRICE
1 0.4704
10 0.461
100 0.4469
1000 0.4328
10000 0.414
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product