SIB410DK-T1-GE3
Part NoSIB410DK-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 30V 9A PPAK SC75-6
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C9A (Tc)
DriveVoltage(MaxRdsOn1.8V, 4.5V
MinRdsOn)42mOhm @ 3.8A, 4.5V
RdsOn(Max)@Id1V @ 250µA
Vgs15 nC @ 8 V
Vgs(th)(Max)@Id±8V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds2.5W (Ta), 13W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperaturePowerPAK® SC-75-6
MountingTypePowerPAK® SC-75-6
SupplierDevicePackage560 pF @ 15 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
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6169
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Associated Product
