SIB417AEDK-T1-GE3
RoHS

SIB417AEDK-T1-GE3

Part NoSIB417AEDK-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 8V 9A PPAK SC75-6
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ECAD Module SIB417AEDK-T1-GE3
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Specification
PackageTape & Reel (TR),Digi-Reel®
SeriesTrenchFET®
ProductStatusObsolete
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)8 V
Current-ContinuousDrain(Id)@25°C9A (Tc)
DriveVoltage(MaxRdsOn1.2V, 4.5V
MinRdsOn)32mOhm @ 3A, 4.5V
RdsOn(Max)@Id1V @ 250µA
Vgs±5V
Vgs(th)(Max)@Id-
Vgs(Max)2.4W (Ta), 13W (Tc)
InputCapacitance(Ciss)(Max)@Vds-55°C ~ 150°C (TJ)
FETFeatureSurface Mount
PowerDissipation(Max)PowerPAK® SC-75-6
OperatingTemperaturePowerPAK® SC-75-6
MountingType18.5 nC @ 5 V
SupplierDevicePackage878 pF @ 4 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 7720
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Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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