SIB911DK-T1-GE3
RoHS

SIB911DK-T1-GE3

Part NoSIB911DK-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET 2P-CH 20V 2.6A SC75-6L
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ECAD Module SIB911DK-T1-GE3
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Specification
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusObsolete
TechnologyMOSFET (Metal Oxide)
Configuration2 P-Channel (Dual)
FETFeature-
DraintoSourceVoltage(Vdss)20V
Current-ContinuousDrain(Id)@25°C2.6A
RdsOn(Max)@Id295mOhm @ 1.5A, 4.5V
Vgs1V @ 250µA
Vgs(th)(Max)@Id4nC @ 8V
GateCharge(Qg)(Max)@Vgs115pF @ 10V
InputCapacitance(Ciss)(Max)@Vds3.1W
Power-Max-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SC-75-6L Dual
Package/CasePowerPAK® SC-75-6L Dual
SupplierDevicePackage-
Grade-
Qualification
In Stock: 13316
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Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product