SIE812DF-T1-GE3
Part NoSIE812DF-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 40V 60A 10POLARPAK
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusLast Time Buy
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)40 V
Current-ContinuousDrain(Id)@25°C60A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)2.6mOhm @ 25A, 10V
RdsOn(Max)@Id3V @ 250µA
Vgs170 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)8300 pF @ 20 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature5.2W (Ta), 125W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingType10-PolarPAK® (L)
SupplierDevicePackage10-PolarPAK® (L)
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3590
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 3.5524 | |
| 10 | 3.4814 | |
| 100 | 3.3748 | |
| 1000 | 3.2682 | |
| 10000 | 3.1261 |
Associated Product
