SIE848DF-T1-GE3
Part NoSIE848DF-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 30V 60A 10POLARPAK
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C60A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)1.6mOhm @ 25A, 10V
RdsOn(Max)@Id2.5V @ 250µA
Vgs138 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds5.2W (Ta), 125W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperature10-PolarPAK® (L)
MountingType10-PolarPAK® (L)
SupplierDevicePackage6100 pF @ 15 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
6735
Pricing
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Associated Product
