SIHB16N50C-E3
Part NoSIHB16N50C-E3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 500V 16A D2PAK
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)500 V
Current-ContinuousDrain(Id)@25°C16A (Tc)
DriveVoltage(MaxRdsOn380mOhm @ 8A, 10V
MinRdsOn)5V @ 250µA
RdsOn(Max)@Id68 nC @ 10 V
Vgs±30V
Vgs(th)(Max)@Id1900 pF @ 25 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds250W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperatureTO-263 (D2PAK)
MountingTypeTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
SupplierDevicePackage10V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
11527
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 5.9616 | |
| 10 | 5.8424 | |
| 100 | 5.6635 | |
| 1000 | 5.4847 | |
| 10000 | 5.2462 |
Associated Product
