SIHD5N50D-GE3
Part NoSIHD5N50D-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 500V 5.3A TO252AA
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)500 V
Current-ContinuousDrain(Id)@25°C5.3A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)1.5Ohm @ 2.5A, 10V
RdsOn(Max)@Id5V @ 250µA
Vgs20 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)325 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature104W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageSurface Mount
Package/CaseDPAK
GateCharge(Qg)(Max)@VgsTO-252-3, DPak (2 Leads + Tab), SC-63
Grade
Qualification
In Stock:
9933
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.9494 | |
| 10 | 0.9304 | |
| 100 | 0.9019 | |
| 1000 | 0.8734 | |
| 10000 | 0.8355 |
Associated Product
