SIHD6N62ET1-GE3
Part NoSIHD6N62ET1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 620V 6A TO252AA
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesE
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)620 V
Current-ContinuousDrain(Id)@25°C6A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)900mOhm @ 3A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs34 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)578 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature78W (Tc)
PowerDissipation(Max)Surface Mount
OperatingTemperatureTO-252AA
MountingTypeTO-252-3, DPak (2 Leads + Tab), SC-63
SupplierDevicePackage-55°C ~ 150°C (TJ)
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3916
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.663 | |
| 10 | 0.6497 | |
| 100 | 0.6298 | |
| 1000 | 0.61 | |
| 10000 | 0.5834 |
Associated Product
