SIHG22N65E-GE3
Part NoSIHG22N65E-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 650V 22A TO247AC
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)650 V
Current-ContinuousDrain(Id)@25°C22A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)180mOhm @ 11A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs110 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)2415 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature227W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247AC
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3536
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 3.6295 | |
| 10 | 3.5569 | |
| 100 | 3.448 | |
| 1000 | 3.3391 | |
| 10000 | 3.194 |
Associated Product
