SIHG32N50D-GE3
RoHS

SIHG32N50D-GE3

Part NoSIHG32N50D-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 500V 30A TO247AC
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ECAD Module SIHG32N50D-GE3
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Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)500 V
Current-ContinuousDrain(Id)@25°C30A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)150mOhm @ 16A, 10V
RdsOn(Max)@Id5V @ 250µA
Vgs96 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)2550 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature390W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247AC
SupplierDevicePackageTO-247-3
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock: 11014
Pricing
QTY UNIT PRICE EXT PRICE
1 5.577
10 5.4655
100 5.2982
1000 5.1308
10000 4.9078
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product