SIHG47N60AE-GE3
RoHS

SIHG47N60AE-GE3

Part NoSIHG47N60AE-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 600V 43A TO247AC
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ECAD Module SIHG47N60AE-GE3
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Specification
PackageTube
SeriesE
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C43A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)65mOhm @ 24A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs182 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)3600 pF @ 100 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature313W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247AC
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 10648
Pricing
QTY UNIT PRICE EXT PRICE
1 6.2167
10 6.0924
100 5.9059
1000 5.7194
10000 5.4707
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product