SIJH112E-T1-GE3
Part NoSIJH112E-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 100V 23A/225A PPAK
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C23A (Ta), 225A (Tc)
DriveVoltage(MaxRdsOn2.8mOhm @ 20A, 10V
MinRdsOn)4V @ 250µA
RdsOn(Max)@Id160 nC @ 10 V
Vgs±20V
Vgs(th)(Max)@Id8050 pF @ 50 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds3.3W (Ta), 333W (Tc)
FETFeature-55°C ~ 175°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperaturePowerPAK® 8 x 8
MountingType8-PowerTDFN
SupplierDevicePackage-
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
2887
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 4.641 | |
| 10 | 4.5482 | |
| 100 | 4.4089 | |
| 1000 | 4.2697 | |
| 10000 | 4.0841 |
Associated Product
