SIR412DP-T1-GE3

Part NoSIR412DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 25V 20A PPAK SO-8

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Specification

PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®

SeriesTrenchFET®

ProductStatusObsolete

FETTypeN-Channel

TechnologyMOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss)25 V

Current-ContinuousDrain(Id)@25°C20A (Tc)

DriveVoltage(MaxRdsOn4.5V, 10V

MinRdsOn)12mOhm @ 10A, 10V

RdsOn(Max)@Id2.5V @ 250µA

Vgs16 nC @ 10 V

Vgs(th)(Max)@Id±20V

Vgs(Max)-

InputCapacitance(Ciss)(Max)@Vds3.9W (Ta), 15.6W (Tc)

FETFeature-55°C ~ 150°C (TJ)

PowerDissipation(Max)Surface Mount

OperatingTemperaturePowerPAK® SO-8

MountingTypePowerPAK® SO-8

SupplierDevicePackage600 pF @ 10 V

Package/Case-

GateCharge(Qg)(Max)@Vgs-

Grade

Qualification

In Stock: 14659
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