SIR500DP-T1-RE3
Part NoSIR500DP-T1-RE3
ManufacturerVishay Siliconix
DescriptionN-CHANNEL 30 V (D-S) 150C MOSFET
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET® Gen V
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C85.9A (Ta), 350.8A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)0.47mOhm @ 20A, 10V
RdsOn(Max)@Id2.2V @ 250µA
Vgs180 nC @ 10 V
Vgs(th)(Max)@Id+16V, -12V
Vgs(Max)8960 pF @ 15 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature6.25W (Ta), 104.1W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SO-8
SupplierDevicePackagePowerPAK® SO-8
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
7428
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.2956 | |
| 10 | 1.2697 | |
| 100 | 1.2308 | |
| 1000 | 1.192 | |
| 10000 | 1.1401 |
Associated Product
