SIR5112DP-T1-RE3
Part NoSIR5112DP-T1-RE3
ManufacturerVishay Siliconix
DescriptionN-CHANNEL 100 V (D-S) MOSFET POW
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
Technology12.6A (Ta), 42.6A (Tc)
DraintoSourceVoltage(Vdss)5W (Ta), 56.8W (Tc)
Current-ContinuousDrain(Id)@25°CSurface Mount
DriveVoltage(MaxRdsOnPowerPAK® SO-8
MinRdsOn)PowerPAK® SO-8
RdsOn(Max)@IdMOSFET (Metal Oxide)
Vgs100 V
Vgs(th)(Max)@Id7.5V, 10V
Vgs(Max)14.9mOhm @ 10A, 10V
InputCapacitance(Ciss)(Max)@Vds4V @ 250µA
FETFeature16 nC @ 10 V
PowerDissipation(Max)±20V
OperatingTemperature790 pF @ 50 V
MountingType-
SupplierDevicePackage-55°C ~ 150°C (TJ)
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
24019
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.7819 | |
| 10 | 1.7463 | |
| 100 | 1.6928 | |
| 1000 | 1.6393 | |
| 10000 | 1.5681 |
Associated Product
