SIR862DP-T1-GE3
Part NoSIR862DP-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 25V 50A PPAK SO-8
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)25 V
Current-ContinuousDrain(Id)@25°C50A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)2.8mOhm @ 15A, 10V
RdsOn(Max)@Id2.3V @ 250µA
Vgs±20V
Vgs(th)(Max)@Id3800 pF @ 10 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds5.2W (Ta), 69W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperaturePowerPAK® SO-8
MountingTypePowerPAK® SO-8
SupplierDevicePackage90 nC @ 10 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
16507
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.4959 | |
| 10 | 0.486 | |
| 100 | 0.4711 | |
| 1000 | 0.4562 | |
| 10000 | 0.4364 |
Associated Product
