SIRA00DP-T1-RE3
RoHS

SIRA00DP-T1-RE3

Part NoSIRA00DP-T1-RE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 30V 100A PPAK SO-8
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ECAD Module SIRA00DP-T1-RE3
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Specification
PackageTape & Reel (TR)
SeriesTrenchFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C100A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)1mOhm @ 20A, 10V
RdsOn(Max)@Id2.2V @ 250µA
Vgs220 nC @ 10 V
Vgs(th)(Max)@Id+20V, -16V
Vgs(Max)11700 pF @ 15 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature104W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SO-8
SupplierDevicePackagePowerPAK® SO-8
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 2697
Pricing
QTY UNIT PRICE EXT PRICE
1 0.7425
10 0.7277
100 0.7054
1000 0.6831
10000 0.6534
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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