SIRA34DP-T1-GE3
RoHS

SIRA34DP-T1-GE3

Part NoSIRA34DP-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 30V 40A PPAK SO-8
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ECAD Module SIRA34DP-T1-GE3
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C40A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)6.7mOhm @ 10A, 10V
RdsOn(Max)@Id2.4V @ 250µA
Vgs25 nC @ 10 V
Vgs(th)(Max)@Id+20V, -16V
Vgs(Max)1100 pF @ 15 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.3W (Ta), 31.25W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® SO-8
SupplierDevicePackagePowerPAK® SO-8
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 6501
Pricing
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Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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