SIS447DN-T1-GE3
RoHS

SIS447DN-T1-GE3

Part NoSIS447DN-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 20V 18A PPAK1212-8
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ECAD Module SIS447DN-T1-GE3
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series-
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C18A (Tc)
DriveVoltage(MaxRdsOn2.5V, 10V
MinRdsOn)7.1mOhm @ 20A, 10V
RdsOn(Max)@Id1.2V @ 250µA
Vgs181 nC @ 10 V
Vgs(th)(Max)@Id±12V
Vgs(Max)5590 pF @ 10 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature52W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® 1212-8
SupplierDevicePackagePowerPAK® 1212-8
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 13218
Pricing
QTY UNIT PRICE EXT PRICE
1 1.0502
10 1.0292
100 0.9977
1000 0.9662
10000 0.9242
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product