SIS778DN-T1-GE3
Part NoSIS778DN-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 30V 35A PPAK1212-8
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
Series-
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C35A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)5mOhm @ 10A, 10V
RdsOn(Max)@Id2.2V @ 250µA
Vgs42.5 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1390 pF @ 15 V
InputCapacitance(Ciss)(Max)@VdsSchottky Diode (Body)
FETFeature52W (Tc)
PowerDissipation(Max)-50°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® 1212-8
SupplierDevicePackagePowerPAK® 1212-8
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
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13631
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Associated Product
