SIS932EDN-T1-GE3
RoHS

SIS932EDN-T1-GE3

Part NoSIS932EDN-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET 2N-CH 30V 6A PPAK 1212
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ECAD Module SIS932EDN-T1-GE3
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FETFeature-
DraintoSourceVoltage(Vdss)30V
Current-ContinuousDrain(Id)@25°C6A (Tc)
RdsOn(Max)@Id22mOhm @ 10A, 4.5V
Vgs1.4V @ 250µA
Vgs(th)(Max)@Id14nC @ 4.5V
GateCharge(Qg)(Max)@Vgs1000pF @ 15V
InputCapacitance(Ciss)(Max)@Vds2.6W (Ta), 23W (Tc)
Power-Max-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® 1212-8 Dual
Package/CasePowerPAK® 1212-8 Dual
SupplierDevicePackage-
Grade-
Qualification
In Stock: 4418
Pricing
QTY UNIT PRICE EXT PRICE
1 0.5544
10 0.5433
100 0.5267
1000 0.51
10000 0.4879
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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