SISA66DN-T1-GE3
Part NoSISA66DN-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 30V 40A PPAK1212-8
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR)
SeriesTrenchFET® Gen IV
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C40A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)2.3mOhm @ 15A, 10V
RdsOn(Max)@Id2.2V @ 1mA
Vgs66 nC @ 10 V
Vgs(th)(Max)@Id+20V, -16V
Vgs(Max)3014 pF @ 15 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature52W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® 1212-8
SupplierDevicePackagePowerPAK® 1212-8
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
7220
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.3404 | |
| 10 | 0.3336 | |
| 100 | 0.3234 | |
| 1000 | 0.3132 | |
| 10000 | 0.2996 |
Associated Product
