SISHA04DN-T1-GE3
RoHS

SISHA04DN-T1-GE3

Part NoSISHA04DN-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 30V 30.9A/40A PPAK
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ECAD Module SISHA04DN-T1-GE3
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET® Gen IV
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C30.9A (Ta), 40A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)2.15mOhm @ 15A, 10V
RdsOn(Max)@Id2.2V @ 250µA
Vgs77 nC @ 10 V
Vgs(th)(Max)@Id+20V, -16V
Vgs(Max)3595 pF @ 15 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.7W (Ta), 52W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® 1212-8SH
SupplierDevicePackagePowerPAK® 1212-8SH
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 4053
Pricing
QTY UNIT PRICE EXT PRICE
1 0.8464
10 0.8295
100 0.8041
1000 0.7787
10000 0.7448
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product