SISS10ADN-T1-GE3
Part NoSISS10ADN-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET N-CH 40V 31.7A/109A PPAK
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET® Gen IV
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)40 V
Current-ContinuousDrain(Id)@25°C31.7A (Ta), 109A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)2.65mOhm @ 15A, 10V
RdsOn(Max)@Id2.4V @ 250µA
Vgs61 nC @ 10 V
Vgs(th)(Max)@Id+20V, -16V
Vgs(Max)3030 pF @ 20 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature4.8W (Ta), 56.8W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® 1212-8S
SupplierDevicePackagePowerPAK® 1212-8S
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
7808
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.8649 | |
| 10 | 0.8476 | |
| 100 | 0.8217 | |
| 1000 | 0.7957 | |
| 10000 | 0.7611 |
Associated Product
