SISS27ADN-T1-GE3
Part NoSISS27ADN-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 30V 50A PPAK1212-8S
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET® Gen III
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C50A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)5.1mOhm @ 15A, 10V
RdsOn(Max)@Id2.2V @ 250µA
Vgs55 nC @ 4.5 V
Vgs(th)(Max)@Id±20V
Vgs(Max)4660 pF @ 15 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature57W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® 1212-8S
SupplierDevicePackagePowerPAK® 1212-8S
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
13584
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.8463 | |
| 10 | 0.8294 | |
| 100 | 0.804 | |
| 1000 | 0.7786 | |
| 10000 | 0.7447 |
Associated Product
