SiSH617DN-T1-GE3
Part NoSiSH617DN-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET P-CH 30V 13.9A/35A PPAK
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET®
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C13.9A (Ta), 35A (Tc)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)12.3mOhm @ 13.9A, 10V
RdsOn(Max)@Id2.5V @ 250µA
Vgs59 nC @ 10 V
Vgs(th)(Max)@Id±25V
Vgs(Max)1800 pF @ 15 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3.7W (Ta), 52W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypePowerPAK® 1212-8SH
SupplierDevicePackagePowerPAK® 1212-8SH
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
7639
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.0396 | |
| 10 | 1.0188 | |
| 100 | 0.9876 | |
| 1000 | 0.9564 | |
| 10000 | 0.9148 |
Associated Product
