SiZ350DT-T1-GE3
RoHS

SiZ350DT-T1-GE3

Part NoSiZ350DT-T1-GE3
ManufacturerVishay Siliconix
DescriptionMOSFET 2N-CH 30V 18.5A 8PWR33
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ECAD Module SiZ350DT-T1-GE3
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Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesTrenchFET® Gen IV
ProductStatusActive
TechnologyMOSFET (Metal Oxide)
Configuration2 N-Channel (Dual)
FETFeature-
DraintoSourceVoltage(Vdss)30V
Current-ContinuousDrain(Id)@25°C18.5A (Ta), 30A (Tc)
RdsOn(Max)@Id6.75mOhm @ 15A, 10V
Vgs2.4V @ 250µA
Vgs(th)(Max)@Id20.3nC @ 10V
GateCharge(Qg)(Max)@Vgs940pF @ 15V
InputCapacitance(Ciss)(Max)@Vds3.7W (Ta), 16.7W (Tc)
Power-Max-55°C ~ 150°C (TJ)
OperatingTemperature-
MountingType-
Package/CaseSurface Mount
SupplierDevicePackage8-PowerWDFN
Grade8-Power33 (3x3)
Qualification
In Stock: 6273
Pricing
QTY UNIT PRICE EXT PRICE
1 0.9701
10 0.9507
100 0.9216
1000 0.8925
10000 0.8537
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product