FQE10N20CTU
Part NoFQE10N20CTU
Manufactureronsemi
DescriptionMOSFET N-CH 200V 4A TO126-3
Datasheet
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ECAD Module
Specification
PackageTube
SeriesQFET®
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C4A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)360mOhm @ 2A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs26 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)510 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature12.8W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-126-3
SupplierDevicePackageTO-225AA, TO-126-3
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
5381
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.2132 | |
| 10 | 0.2089 | |
| 100 | 0.2025 | |
| 1000 | 0.1961 | |
| 10000 | 0.1876 |
Associated Product
