NTBG030N120M3S
Part NoNTBG030N120M3S
Manufactureronsemi
DescriptionSILICON CARBIDE (SIC) MOSFET - E
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C77A (Tc)
DriveVoltage(MaxRdsOn18V
MinRdsOn)39mOhm @ 30A, 18V
RdsOn(Max)@Id4.4V @ 15mA
Vgs107 nC @ 18 V
Vgs(th)(Max)@Id+22V, -10V
Vgs(Max)2430 pF @ 800 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature348W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeD2PAK-7
SupplierDevicePackageTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3794
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 23.712 | |
| 10 | 23.2378 | |
| 100 | 22.5264 | |
| 1000 | 21.815 | |
| 10000 | 20.8666 |
Associated Product
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