NTD32N06-1G
RoHS

NTD32N06-1G

Part NoNTD32N06-1G
Manufactureronsemi
DescriptionMOSFET N-CH 60V 32A IPAK
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ECAD Module NTD32N06-1G
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Specification
PackageTube
Series-
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)60 V
Current-ContinuousDrain(Id)@25°C32A (Ta)
DriveVoltage(MaxRdsOn10V
MinRdsOn)26mOhm @ 16A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs60 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1725 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1.5W (Ta), 93.75W (Tj)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeI-PAK
SupplierDevicePackageTO-251-3 Short Leads, IPak, TO-251AA
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock: 9415
Pricing
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Shipping Information
Shiped FromShenZhen Warehourse
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