NTD4909N-1G
Part NoNTD4909N-1G
Manufactureronsemi
DescriptionMOSFET N-CH 30V 8.8A/41A IPAK
Datasheet
Download Now!
ECAD Module
Specification
PackageTube
Series-
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)30 V
Current-ContinuousDrain(Id)@25°C8.8A (Ta), 41A (Tc)
DriveVoltage(MaxRdsOn8mOhm @ 30A, 10V
MinRdsOn)2.2V @ 250µA
RdsOn(Max)@Id17.5 nC @ 10 V
Vgs1314 pF @ 15 V
Vgs(th)(Max)@Id-
Vgs(Max)1.37W (Ta), 29.4W (Tc)
InputCapacitance(Ciss)(Max)@Vds-55°C ~ 175°C (TJ)
FETFeatureThrough Hole
PowerDissipation(Max)I-PAK
OperatingTemperatureTO-251-3 Short Leads, IPak, TO-251AA
MountingType4.5V, 10V
SupplierDevicePackage±20V
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
5516
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | Get latest price! | - |
| 10 | Get latest price! | - |
| 100 | Get latest price! | - |
| 1000 | Get latest price! | - |
| 10000 | Get latest price! | - |
Associated Product
