NTD4969N-1G
Part NoNTD4969N-1G
Manufactureronsemi
DescriptionMOSFET N-CH 30V 41A IPAK-4
Datasheet
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ECAD Module
Specification
RoHSCompliant
Fall Time6.4 ns
Lead FreeLead Free
Rise Time27 ns
Rds On Max9 mΩ
Case/PackageTO-251
Number of Pins4
Lifecycle StatusObsolete (Last Updated: 2 years ago)
Input Capacitance837 pF
Power Dissipation26.3 W
Turn-On Delay Time10 ns
Radiation HardeningNo
Turn-Off Delay Time13.3 ns
Element ConfigurationSingle
Max Power Dissipation1.38 W
Max Operating Temperature175 °C
Min Operating Temperature-55 °C
Drain to Source Resistance19 mΩ
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)12.7 A
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 2 years ago)
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage30 V
In Stock:
8479
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.17 | |
| 10 | 0.1666 | |
| 100 | 0.1615 | |
| 1000 | 0.1564 | |
| 10000 | 0.1496 |
Associated Product
