NTH4L020N090SC1
Part NoNTH4L020N090SC1
Manufactureronsemi
DescriptionSILICON CARBIDE MOSFET, NCHANNEL
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)900 V
Current-ContinuousDrain(Id)@25°C116A (Tc)
DriveVoltage(MaxRdsOn15V, 18V
MinRdsOn)28mOhm @ 60A, 15V
RdsOn(Max)@Id4.3V @ 20mA
Vgs196 nC @ 15 V
Vgs(th)(Max)@Id+22V, -8V
Vgs(Max)4415 pF @ 450 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature484W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247-4L
SupplierDevicePackageTO-247-4
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4655
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 35.6915 | |
| 10 | 34.9777 | |
| 100 | 33.9069 | |
| 1000 | 32.8362 | |
| 10000 | 31.4085 |
Associated Product
