NVH4L018N075SC1
Part NoNVH4L018N075SC1
Manufactureronsemi
DescriptionSIC MOS TO247-4L 750V
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)750 V
Current-ContinuousDrain(Id)@25°C140A (Tc)
DriveVoltage(MaxRdsOn15V, 18V
MinRdsOn)18mOhm @ 66A, 18V
RdsOn(Max)@Id4.3V @ 22mA
Vgs262 nC @ 18 V
Vgs(th)(Max)@Id5010 pF @ 375 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds500W (Tc)
FETFeature-55°C ~ 175°C (TJ)
PowerDissipation(Max)Automotive
OperatingTemperatureAEC-Q101
MountingTypeThrough Hole
SupplierDevicePackageTO-247-4L
Package/CaseTO-247-4
GateCharge(Qg)(Max)@Vgs+22V, -8V
Grade
Qualification
In Stock:
5784
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 52.9146 | |
| 10 | 51.8563 | |
| 100 | 50.2689 | |
| 1000 | 48.6814 | |
| 10000 | 46.5648 |
Associated Product
