NVMSD6N303R2G

Part NoNVMSD6N303R2G

Manufactureronsemi

DescriptionMOSFET N-CH 30V 6A 8SOIC

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Specification

PackageTape & Reel (TR)

Series-

ProductStatusObsolete

FETTypeN-Channel

TechnologyMOSFET (Metal Oxide)

DraintoSourceVoltage(Vdss)30 V

Current-ContinuousDrain(Id)@25°C6A (Ta)

DriveVoltage(MaxRdsOn-

MinRdsOn)32mOhm @ 6A, 10V

RdsOn(Max)@Id2.5V @ 250µA

Vgs30 nC @ 10 V

Vgs(th)(Max)@Id-

Vgs(Max)950 pF @ 24 V

InputCapacitance(Ciss)(Max)@VdsSchottky Diode (Isolated)

FETFeature-

PowerDissipation(Max)-55°C ~ 150°C (TJ)

OperatingTemperatureSurface Mount

MountingType8-SOIC

SupplierDevicePackage8-SOIC (0.154, 3.90mm Width)

Package/CaseAutomotive

GateCharge(Qg)(Max)@VgsAEC-Q101

Grade

Qualification

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