FCP9N60N
Part NoFCP9N60N
Manufactureronsemi
DescriptionMOSFET N-CH 600V 9A TO220-3
Datasheet
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Specification
Vgs(th) (Max) @ Id4V @ 250µA
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Supplier Device PackageTO-220-3
SeriesSuperMOS™
Rds On (Max) @ Id, Vgs385 mOhm @ 4.5A, 10V
Power Dissipation (Max)83.3W (Tc)
PackagingTube
Package / CaseTO-220-3
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds1240pF @ 100V
Gate Charge (Qg) (Max) @ Vgs29nC @ 10V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)10V
Drain to Source Voltage (Vdss)600V
Detailed DescriptionN-Channel 600V 9A (Tc) 83.3W (Tc) Through Hole TO-220-3
Current - Continuous Drain (Id) @ 25°C9A (Tc)
In Stock:
15260
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 1.9656 | |
10 | 1.9263 | |
100 | 1.8673 | |
1000 | 1.8084 | |
10000 | 1.7297 |