FQPF19N10
Part NoFQPF19N10
Manufactureronsemi
DescriptionMOSFET N-CH 100V 13.6A TO220F
Datasheet
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ECAD Module
Specification
PackageBulk
SeriesQFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C13.6A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)100mOhm @ 6.8A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs25 nC @ 10 V
Vgs(th)(Max)@Id±25V
Vgs(Max)780 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature38W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-220F-3
SupplierDevicePackageTO-220-3 Full Pack
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
15222
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.5002 | |
| 10 | 0.4902 | |
| 100 | 0.4752 | |
| 1000 | 0.4602 | |
| 10000 | 0.4402 |
Associated Product
