GSFU6504
RoHS

GSFU6504

Part NoGSFU6504
DescriptionMOSFET, N-CH, SINGLE, 4.00A, 650
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ECAD Module GSFU6504
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Specification
PackageTube
Series-
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.7Ohm @ 2A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs12.5 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds430 pF @ 25 V
FET Feature-
Power Dissipation (Max)77W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220F
Package / CaseTO-220-3 Full Pack
Grade-
Qualification-
In Stock: 998
Pricing
QTY UNIT PRICE EXT PRICE
1 0.62
10 0.608
100 0.59
1000 0.57
10000 0.55
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product