IRF341
Part NoIRF341
ManufacturerHarris Corporation
DescriptionN-CHANNEL POWER MOSFET
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)350 V
Current-ContinuousDrain(Id)@25°C10A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)550mOhm @ 5.2A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs63 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1250 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature125W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-3
SupplierDevicePackageTO-204AA, TO-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
6543
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.7784 | |
| 10 | 1.7428 | |
| 100 | 1.6895 | |
| 1000 | 1.6361 | |
| 10000 | 1.565 |
Associated Product
