IXTA3N100P
Part NoIXTA3N100P
ManufacturerIXYS
DescriptionMOSFET N-CH 1000V 3A TO263
Datasheet
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ECAD Module
Specification
PackageTube
SeriesPolar
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)1000 V
Current-ContinuousDrain(Id)@25°C3A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)4.8Ohm @ 1.5A, 10V
RdsOn(Max)@Id4.5V @ 250µA
Vgs39 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)1100 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature125W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-263AA
SupplierDevicePackageTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
6953
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 4.606 | |
| 10 | 4.5139 | |
| 100 | 4.3757 | |
| 1000 | 4.2375 | |
| 10000 | 4.0533 |
Associated Product
