IXTF6N200P3
Part NoIXTF6N200P3
ManufacturerIXYS
DescriptionMOSFET N-CH 2000V 4A I4PAC
Datasheet
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ECAD Module
Specification
PackageTube
SeriesPolar P3™
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)2000 V
Current-ContinuousDrain(Id)@25°C4A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)4.2Ohm @ 3A, 10V
RdsOn(Max)@Id5V @ 250µA
Vgs143 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)3700 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature215W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeISOPLUS i4-PAC™
SupplierDevicePackageISOPLUSi5-Pak™
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
4127
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 28.8792 | |
| 10 | 28.3016 | |
| 100 | 27.4352 | |
| 1000 | 26.5689 | |
| 10000 | 25.4137 |
Associated Product
