MSCSM120HM31T3AG
Part NoMSCSM120HM31T3AG
ManufacturerMicrochip
DescriptionSIC 4N-CH 1200V 89A
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
TechnologySilicon Carbide (SiC)
Configuration4 N-Channel (Full Bridge)
FETFeature-
DraintoSourceVoltage(Vdss)1200V (1.2kV)
Current-ContinuousDrain(Id)@25°C89A (Tc)
RdsOn(Max)@Id31mOhm @ 40A, 20V
Vgs2.8V @ 3mA
Vgs(th)(Max)@Id232nC @ 20V
GateCharge(Qg)(Max)@Vgs3020pF @ 1000V
InputCapacitance(Ciss)(Max)@Vds395W (Tc)
Power-Max-40°C ~ 175°C (TJ)
OperatingTemperature-
MountingType-
Package/CaseChassis Mount
SupplierDevicePackageModule
Grade-
Qualification
In Stock:
3303
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 239.5332 | |
| 10 | 234.7425 | |
| 100 | 227.5565 | |
| 1000 | 220.3705 | |
| 10000 | 210.7892 |
Associated Product
