NC1M120C75RRNG
RoHS

NC1M120C75RRNG

Part NoNC1M120C75RRNG
ManufacturerNextGen Components
DescriptionSiC MOSFET N 1200V 75mohm 46A 7
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ECAD Module NC1M120C75RRNG
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Specification
PackageTape & Reel (TR)
SeriesNC1M
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C46A (Tc)
DriveVoltage(MaxRdsOn18V
MinRdsOn)75mOhm @ 20A, 18V
RdsOn(Max)@Id2.3V @ 5mA
Vgs-
Vgs(th)(Max)@Id+18V, -5V
Vgs(Max)1402 pF @ 1000 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature240W (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-263-7L
SupplierDevicePackageTO-263-8, DPak (7 Leads + Tab)
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock: 11979
Pricing
QTY UNIT PRICE EXT PRICE
1 24.5575
10 24.0663
100 23.3296
1000 22.5929
10000 21.6106
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product