STB10NK60Z-1
Part NoSTB10NK60Z-1
ManufacturerSTMicroelectronics
DescriptionMOSFET N-CH 600V 10A I2PAK
Datasheet
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Specification
PackageTube
SeriesSuperMESH™
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)600 V
Current-ContinuousDrain(Id)@25°C10A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)750mOhm @ 4.5A, 10V
RdsOn(Max)@Id4.5V @ 250µA
Vgs70 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)1370 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature115W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeI2PAK
SupplierDevicePackageTO-262-3 Long Leads, I2PAK, TO-262AA
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
19621
Pricing
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